Metal etching (also known as corrosion reaction) is a precision process that utilizes chemical or physical methods to remove metal materials.
The technology does not increase the internal stress of the material during the process. This technology does not increase the internal stress of the material during the process, and can accurately obtain the desired processing pattern, which is suitable for a wide range of industries.
It is suitable for a wide range of industries.
Metal etching is mainly divided into Wet Etching and Dry Etching. We specialize in Wet Etching technology, which utilizes chemical solvents to treat metal materials with high selectivity, It utilizes chemical solvents to treat the metal material, which has the advantages of high selectivity, high etching rate, and low equipment cost.
This method can not only etch vertically, but also realize a horizontal etching effect.
Horizontal etching is also possible. The area of material to be preserved is protected by a yellowing process, and chemical solvents are sprayed withthe etching solution to remove excess material.
The etching solution is sprayed with achemical solvent to remove excess metal material, resulting in precise shapes and details.
We have been specializing in OLED MASK evaporation masks for many years,and we have developed multi-stage etching and alignment technology to meet various design requirements.
● Etching products for various types of plate thicknesses
| 遮罩類/ 一般物件 | 板厚T(mm) | 尺寸公差(CD) | 座標公差(TP) | 極限設計 | |||
|---|---|---|---|---|---|---|---|
| 通用 | 高精度 | 通用 | 高精度 | 最小孔徑 | 最窄線寬 | ||
| 0.03~0.05 | ±0.03mm | ±0.006mm | ±0.03mm | ±0.006mm | 0.05 | 100%*T | |
| 0.06~0.15 | ±0.03mm | ±0.015mm | ±0.03mm | ±0.015mm | 100%*T | 100%*T | |
| 0.20 | ±0.03mm | 依圖議定 | ±0.03mm | 依圖議定 | 100%*T | 100%*T | |
| 0.30 | ±0.03mm | ±0.03mm | 100%*T | 100%*T | |||
| 0.40 | ±10%*T | ±0.03mm | 100%*T | 100%*T | |||
| 0.50 | ±10%*T | ±0.03mm | 100%*T | 100%*T | |||
| 0.60~1.00 | ±10%*T | ±0.03mm | 100%*T | 100%*T | |||
| 導線架 (L/F) | 板厚T(mm) | 最小寬度(A) | 最小間距（B） | 半蝕深度(C) | |||
| 通用設計 | 通用公差 | 通用設計 | 通用公差 | 通用設計 | 通用公差 | ||
| 0.20 | >0.30mm | ±0.03mm | T*0.75 | ±0.03mm | ≥0.12 | ±0.03 | |
| 0.25 | >0.30mm | ±0.03mm | T*0.75 | ±0.03mm | ≥0.15 | ±0.03 | |
| 0.50 | >0.30mm | ±10%*T | T*0.75 | ±10%*T | ≥0.33 | ±0.03 | |
● Depth of semi-etch corresponds to width design
| 半蝕斷差 | 深度 | 寬度 |
|---|---|---|
| 單階 | 10um | ≥250um |
| 20um | ≥400um | |
| 30um | ≥550um | |
| 40um | ≥700um | |
| 雙階 | 依設計圖評估 | |
● OLED MASKSection structure and specifications
1、Masks for vaporization are introduced into an open-end, half-etched design to meet the requirements of a normal vaporization angle of TA=45±5 degrees. A secondary exposure process is required to achieve alignment accuracy of ±50um
2、General Design Specifications：
Step width <5um
Step height ≤15um
Taper angle 30~70°,Adjustable according to drawing requirements。
Half depth Regular Type10~40um.Special needs can be evaluated on a case-by-case basis。
Half width is proportional to depth. Refer to Table 1 for design principles, special needs can be evaluated separately.
3、Steam-plated OPEN MASK
一般型
防刮型
